Process for manufacturing semiconductor wafer, process for manufacturing semiconductor chip, and IC card

ABSTRACT

A manufacturing method includes the steps of integrally fabricating a plurality of circuit elements ( 41 ) on a substrate ( 1   a ), forming electrode bumps ( 11 ) on electrode pads ( 11   b ) conducting with circuit elements ( 41 ), forming a scribe line or a scribe line mark ( 21   a ) at a prescribed position of substrate ( 1   a ), and sticking an anisotropically conductive film ( 30 ) to cover each of the electrode bumps ( 11 ) and the scribe line or the scribe line mark ( 21   a ). The step of forming the electrode bumps ( 11 ) and the step of forming the scribe line or the scribe line mark ( 21   a ) are performed simultaneously. The electrode bumps ( 11 ) and the scribe line or the scribe line mark ( 21   a ) are preferably formed of gold. By the manufacturing method, even when an anisotropically conductive film is stuck on a semiconductor wafer having a plurality of circuit elements formed, the circuit elements can be diced as desired.

TECHNICAL FIELD

The present invention relates to a method manufacturing a semiconductorwafer having circuit elements integrally fabricated on a substrate, asemiconductor wafer manufactured by this method, a method ofmanufacturing semiconductor chips from the semiconductor wafer, thesemiconductor chips manufactured by this method, and an IC card providedwith the semiconductor chip.

BACKGROUND ART

FIG. 7 is an enlarged view of an insulating substrate 20 having aprescribed wiring pattern with a semiconductor chip 10 mounted by aso-called chip-on-board method. In an example of the chip-on-boardmethod, an anisotropically conductive film 30 is interposed betweeninsulating substrate 20 having conductor bumps 21 formed protrudingupward and semiconductor chip 10 having electrode bumps 11 protrudedfrom a main surface 10 a, and these are heated and pressed so thatconductor bumps 21 and electrode bumps 11 are conducted and connected.

As can be seen best from FIG. 7, anisotropically conductive film 30 hassuch a structure in that conductive particles 32 are dispersed in anadhesive resin film 31, and conductor bumps 21 and electrode bumps 11are conducted and connected to each other as conductive particles 32 areinterposed therebetween. An area of the main surface 10 a ofsemiconductor chip 10 where electrode bumps 11 are not formed is adheredto insulating substrate 20 by the adhesiveness of resin film 31 providedwhen anisotropically conductive film 30 is heated, melt and thereaftersolidified. At this time, the conductive particles 32 are dispersed inresin film 31 and separate from each other, and therefore insulation inthis region is maintained. In the above described method of mounting, byonly a simple operation of pressing semiconductor chip 10 and insulatingsubstrate 20 to each other with anisotropically conductive film 30interposed, it is possible to mount semiconductor chip 10 on insulatingsubstrate 20 while attaining electrical conduction only at necessaryportions. Therefore, as compared with mounting of semiconductor chip 10on insulating substrate 20 through so called chip bonding and wirebonding, the method is very simple and convenient.

When semiconductor chip 10 is to be mounted on insulating substrate 20utilizing anisotropically conductive film 30 however, it is necessary toprepare very small anisotropically conductive film having 4 sides eachbeing about a few mm corresponding to the size of semiconductor chip 10to be mounted, in the same number as the number of semiconductor chips10 to be mounted. Further, prior to mounting of semiconductor chips 10,it is necessary to place anisotropically conductive films 30 one by oneon conductor bumps 21 of insulating substrate 20 or to stick the filmsone by one on the main surface 10 a of semiconductor chips 10. Thus, theconventional method of mounting utilizing anisotropically conductivefilm 30 has poor workability in preparation preceding mounting of thesemiconductor chips 10.

In view of the foregoing, a method has been proposed in whichanisotropically conductive film 30 is stuck entirely over a circuitelement forming region of a semiconductor wafer on which a plurality ofcircuit elements, which are to be the semiconductor chips 10, areformed, and the anisotropically conductive film 30 is dicedsimultaneously with dicing of the circuit elements. In the abovedescribed method, when the circuit elements are divided into individualsemiconductor chips 10, anisotropically conductive film 30 is stuck onmain surface 10 a, and the method has an advantage that any specialpreparation is not necessary prior to mounting of the semiconductor chip10.

Generally, a semiconductor wafer has so called scribe lines formed atappropriate positions, and the wafer is diced into circuit elements by adiamond cutter, for example, using the scribe lines as reference marks.The scribe line is formed, for example, simultaneously with the step offorming a pattern of a passivation film. Now, as described above,anisotropically conductive film 30 has such a structure in that a numberof conductive particles 32 are dispersed in resin film 31. Therefore,the color of anisotropically conductive film 30 is milky white. Whenanisotropically conductive film 30 is stuck on the semiconductor wafer,it becomes necessary to recognize silver scribe lines formed of SiN orthe like through milky white anisotropically conductive film. Thiscauses difficulty in visually recognizing the scribe lines, and hencedifficulty in dicing the circuit elements to obtain desiredsemiconductor chips 10.

DISCLOSURE OF THE INVENTION

An object of the present invention is to solve the above describedproblem of the prior art, and to enable dicing of circuit elements asdesired even when an anisotropically conductive film is stuck on asemiconductor wafer having a plurality of circuit elements formedthereon.

In order to attain the above described objects, the present inventionprovides the following technical measure.

More specifically, according to a first aspect of the present invention,the method of manufacturing a semiconductor wafer includes the steps ofintegrally fabricating a plurality of circuit elements on a substrate,forming electrode bumps on electrode pads conducting to respectivecircuit elements, forming scribe lines or scribe line marks atprescribed positions of the substrate, and sticking an anisotropicallyconductive film to cover respective electrode bumps and scribe lines orscribe line marks, wherein the step of forming respective electrodebanks and the step of forming the scribe lines or scribe line marks areperformed simultaneously.

When a semiconductor chip is to be mounted on the substrate using theanisotropically conductive film, it is necessary to form an electrodebump protruding from the main surface of the semiconductor chip on theelectrode pad which is conducted to the circuit element. The electrodebump is formed on the electrode pad after a prescribed wiring patternincluding the electrode pad is formed. According to the manufacturingmethod described above, the step of forming respective electrode bumpsand the step of forming the scribe lines or scribe line marks areperformed simultaneously. More specifically, a new step is not necessaryfor forming the scribe lines or the scribe line marks, and it ispossible to form the scribe lines or scribe line marks at prescribedpositions in the step essential in manufacturing the semiconductorwafer.

In a preferred embodiment, the step of forming respective electrodebumps and scribe lines or scribe line marks includes the steps offorming an insulating layer protecting the circuit elements whileexposing upper surfaces of the electrode pads, forming a barrier metallayer entirely over the circuit element forming region on the substrate,forming a photo resist layer such that portions corresponding to regionswhere respective electrode pads are formed and portions on which thescribe lines or scribe line marks are to be formed can been seen,forming a metal layer at portions where the photo resist layer is notformed, and removing the photo resist layer and the barrier metal layer.

In the manufacturing method described above, by dipping the substrate onwhich the photo resist layer has been formed in a solution containingmetal ions, for example, and by applying electric power using thebarrier metal layer as a negative electrode, a metal layer is grown onregions where the photo resist layer is not formed, and in this manner,respective electrode bumps and the scribe lines or scribe line marks canbe formed simultaneously. More specifically, simply by not forming thephoto resist layer at portions where the scribe lines or scribe linemarks are to be formed when the photo resist layer is formed, the scribelines or the scribe line marks can be formed simultaneously with theelectrode bumps.

In a preferred embodiment, the electrode bumps and the scribe lines orscribe line marks are formed of gold.

As described above, generally, the conventional scribe lines have beenformed simultaneously with passivation, and in that case, the scribelines have been formed of the same material as passivation, for example,SiN. Therefore, when the anisotropically conductive film is stuck, ithas been necessary to recognize silver scribe lines through the milkywhite anisotropically conductive film, and therefore it has beendifficult to visually recognize the scribe lines. By contrast, as thescribe lines or scribe line marks are formed of gold in the preferredembodiment described above, the scribe lines or the scribe line markscan readily be visually recognized through the anisotropicallyconductive film, and therefore dicing of the semiconductor wafer intocircuit elements as desired is facilitated.

The semiconductor wafer manufactured in accordance with the method ofmanufacturing a semiconductor wafer in accordance with the abovedescribed first aspect of the present invention has the scribe lines orthe scribe line marks formed at prescribed positions, and thesemiconductor wafer includes a substrate on which a plurality of circuitelements are fabricated integrally, electrode bumps formedsimultaneously with the scribe lines or the scribe line marks onelectrode pads to be conducted to respective circuit elements, and ananisotropically conductive film stuck on the substrate to coverrespective electrode bumps and the scribe lines or the scribe linemarks.

For the semiconductor wafer having such a structure, it is readilypossible to form the scribe lines or the scribe line marks through themethod of manufacturing in accordance with the first aspect describedabove. Especially when the scribe lines or the scribe line marks areformed of gold, the scribe lines or the scribe line marks can readily bevisually recognized through the anisotropically conductive film stuckthereon, and therefore the lines or the marks can satisfactorily beutilized as reference marks for dicing the semiconductor wafer into thecircuit elements.

The method of manufacturing a semiconductor chip in accordance with asecond aspect of the present invention includes the step of dicing thesemiconductor wafer formed through the method of manufacturing accordingto the first aspect described above, into respective circuit elementsusing the scribe lines or scribe line marks as reference marks.

As already described, the scribe lines or scribe line marks formed onthe semiconductor wafer can readily be visually recognized, andtherefore it goes without saying that the lines or the marks facilitatethe step of dicing into the circuit elements in a desired manner.

Further, on the main surface of the semiconductor chip manufactured bythis manufacturing method, the anisotropically conductive film hasalready been stuck when the semiconductor wafer is diced into respectivecircuit elements. Therefore, when the semiconductor chips are to bemounted on the insulating substrate, it is not necessary to newlyprovide the anisotropically conductive films having four sides of abouta few mm corresponding to the size of the semiconductor chip to bemounted by the same number as the semiconductor chips to be mounted.Further, it is not necessary to place the anisotropically conductivefilms on the conductor bumps of the insulating substrate or to stick thefilms one by one on the main surface of the semiconductor chips, priorto mounting of the semiconductor chips. Therefore, the semiconductorchip is advantageous that it eliminates the necessity of any specialpreparation prior to mounting of the semiconductor chip.

The IC card in accordance with a third aspect of the present inventionis provided by mounting the semiconductor chip formed by themanufacturing method in accordance with the second aspect describedabove on an insulating substrate, and by embedding the insulatingsubstrate on which the semiconductor chip is mounted and an antenna coilconducting to the semiconductor chip in a card formed of resin.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an overall plan view showing an example of a semiconductorwafer in accordance with the present invention.

FIG. 2 is a cross section taken along the line II—II of FIG. 1.

FIGS. 3A to 3F are cross sections of a main portion showing an exampleof the steps of manufacturing the semiconductor chip.

FIG. 4 is an overall perspective view showing an example of thesemiconductor chip in accordance with the present invention.

FIG. 5 is a cross section showing the semiconductor chip being mountedon an insulating substrate.

FIG. 6 shows the semiconductor chip and the insulating substrate pressedto each other.

FIG. 7 is a cross section of a main portion showing a state ofconduction and connection between electrode bumps formed on thesemiconductor chip and conductor bumps formed on the insulatingsubstrate.

FIG. 8 is an exploded side view showing an example of an IC card inaccordance with the present invention.

BEST MODE FOR CARRIED OUT THE INVENTION

A preferred embodiment of the present invention will be describedspecifically with reference to the drawings.

As can be seen from FIGS. 1 and 2, a semiconductor wafer 1 is formed ina disk shape with a part cut flat, and on a substrate 1 a formed ofsilicon, for example, circuit elements 41 are formed integrally. On thesurface of substrate 1 a, scribe line marks 21 a are formed atprescribed positions, and electrode pads 11 b to be conducted withcircuit elements 41 are formed. By electroplating, for example,electrode bumps 11 are formed on electrode pads 1 b. On substrate 1 a onwhich electrode bumps 11 and scribe line marks 21 a are formed, ananisotropically conductive film 30 is stuck to cover these elements.

Scribe line marks 21 a may be formed simultaneously when the electrodebumps 11 are formed, for example. The scribe line mark is formed at aposition near each corner of a group 41 a of circuit elements whichgroup includes 4 circuit elements 41 as a unit, as surrounded by thedotted line in FIG. 1. The shape of the scribe line mark 21 a is notlimited to such a cross shape as shown in FIG. 1, and it may be formedas a linear scribe line.

The method of manufacturing semiconductor wafer 1 will be brieflydescribed with reference to FIGS. 3A to 3F. Cross sections of FIGS. 3Ato 3F correspond to the portion surrounded by a chain line in FIG. 2.

First, on a substrate 1 a formed of silicon, for example, which has adisk shape with a portion cut away flat, circuit elements 41 arefabricated integrally, and, referring to FIG. 3A, electrode pads 11 bwhich are conducted to the circuit elements 41 are formed together witha prescribed wiring pattern. The electrode pad 11 b is formed, forexample, by forming a metal coating layer of aluminum or the like bysputtering or vacuum deposition, for example, and by etching the metalcoating layer.

Thereafter, referring to FIG. 3B, an insulating film 22, that is, apassivation film is formed, for example, by CVD method to expose uppersurfaces of electrode pads 11 b and covering peripheral edges ofelectrode pads 11 b, so as to protect circuit elements 41 and the wiringpattern.

Thereafter, referring to FIG. 3C, a barrier metal layer 23 is formed tocover entirely the region for forming circuit elements 41 of substrate 1a. Barrier metal layer 23 has a structure having a titanium layer and aplatinum layer stuck thereon, with the titanium layer being formed toabout 2000 Å and the platinum layer to about 1000 Å. The barrier metallayer 23 is also formed by sputtering or vacuum deposition.

Thereafter, referring to FIG. 3D, except on regions where electrodebumps 11 are to be formed on electrode pads 11 a and where scribe linemarks 21 a are to be formed, photo resist layer 24 is formed, forexample, by depositing a photo sensitive resin on barrier metal layer23, exposing with a prescribed mask and developing the photo sensitiveresin.

Referring to FIG. 3E, on regions where the photo resist 24 has not beenformed, that is, on regions where electrode bumps 11 and scribe linemarks 21 a are to be formed, a metal layer 24A of gold, for example, isformed. Metal layer 24A is formed, for example, by electroplating. Morespecifically, when metal layer 24A of gold is to be formed byelectroplating, substrate 1 a on which photo resist 24 has been formedis dipped in a solution containing gold ions, and electric power isapplied with barrier metal layer 23 serving as a negative electrode.Here, on regions of barrier metal layer 23 where photo resist 24 is notformed, metal layer 24A of gold grows whereby plated metal layer 24 a,which will be the electrode bumps 11 and scribe line marks 21 a, isformed.

Referring to FIG. 3F, photo resist layer 24 is removed to expose barriermetal layer 23, and barrier metal layer 23 is chemically processed toexpose insulating film 22. In this manner, metal layer 24A is formed aselectrode bumps 11 and scribe line marks 21 a. More specifically,according to the manufacturing method described above, when photo resistlayer 24 is formed, simply by not forming photo resist layer 24 atportions where scribe line marks 21 a are to be formed, it becomespossible to form scribe line marks 21 a simultaneously with electrodebumps 11. Therefore, it is possible to form scribe line marks 21 a atprescribed positions in a step essential for manufacturing semiconductorwafer 1, without necessitating any new step to form the scribe linemarks 21 a.

Finally, by sticking anisotropically conductive film 30 on that surfaceof semiconductor wafer 1 on which circuit elements 41 are formed,semiconductor wafer 1 such as shown in FIGS. 1 and 2 is formed.Anisotropically conductive film 30 may be stuck by using a resinadhesive, or it may be stuck utilizing adhesiveness of anisotropicallyconductive film 30 by heating anisotropically conductive film 30.

Semiconductor wafer 1 manufactured through the above describedmanufacturing method is cut along the line represented by chain dottedline is FIG. 2, and diced into each circuit element 41 to be anindividual semiconductor chip 10 shown in FIG. 4. Dicing ofsemiconductor wafer 1 is done by using a diamond cutter, scribe linemarks 21 a serving as reference marks. This operation is facilitated bythe scribe line marks 21 a formed of gold. As will be described later,anisotropically conductive film 30 is milky white, as it has conductiveparticles 32 dispersed on resin 31 and when the scribe line marks areformed of gold, visual recognition is very much facilitated as comparedwith the marks formed of SiN, for example. Accordingly, it isfacilitated to dice the semiconductor wafer 1 circuit element 41 bycircuit element 41 as desired, using scribe line marks 21 a as referencemarks.

Semiconductor chip 10 manufactured in the above described manner withanisotropically conductive film 30 stuck thereon is mounted on aninsulating substrate and used for various applications. Referring toFIGS. 5 to 7, the step of mounting semiconductor chip 10 on insulatingsubstrate 20 will be briefly described. FIG. 5 shows a state in whichsemiconductor chip 10 having anisotropically conductive film 30 is to beplaced on insulating substrate 20, FIG. 6 shows a state in whichsemiconductor chip 10 and insulating substrate 20 are pressed to eachother, and FIG. 7 is an enlarged view of a main portion of FIG. 6. Inthe present embodiment, semiconductor chip 10 will be described assumingthat it has a semiconductor memory, a capacitor and the like fabricatedintegrally, which will be embedded together with an antenna coil and thelike in a resin card to be used as a so called IC card.

Prior to the description of the step of mounting semiconductor chip 10,anisotropically conductive film 30 and insulating substrate 20 on whichsemiconductor chip 10 is mounted will be briefly described.

As can be best seen in FIG. 5, anisotropically conductive film 30 hassuch a structure in that conductive particles 32 are dispersed ininsulative resin film 31. As conductive particles 32, metal spheres,resin balls with surfaces plated with nickel or plated with nickel andfurther with gold may used. Thickness of anisotropically conductive film30 in a natural state is set to 30 to 50 μm and diameter of conductiveparticles 32 is set to 5 μm, for example.

Insulating substrate 20 on which semiconductor chip 10 is to be mountedis formed of an insulative polyimid resin or the like, and on itssurface, a wiring pattern including an antenna coil 20 a is formed byforming a copper coating followed by a prescribed pattern etching (seeFIG. 8). As shown in FIG. 8, on the surface of insulating substrate 20,a conductive pad is formed to be conducted with the wiring pattern. Onconductive pad, a conductor 21 is formed and exposed by nickel platingand gold plating. Regions of the insulating substrate 20 other than theexposed and formed conductor 21 are generally covered by an insulatingfilm such as polyimid resin. As can be best seen from FIG. 5, conductor21 protrudes slightly from the surface of insulating substrate 20,because of the thickness of the copper wiring pattern.

As shown in FIGS. 5 and 6, semiconductor chip 10 having anisotropicallyconductive film 30 manufactured in the above described manner ispositioned with anisotropically conductive film 30 facing downward suchthat electrode bumps 11 correspond to conductors 21 of insulatingsubstrate 20, and pressed with a prescribed pressure. At this time, asupport base 40 on which insulating substrate 20 is placed is heated toabout 180°, for example, by a heater incorporated therein (not shown).

As shown in FIG. 6, semiconductor chip 10 is pressed onto insulatingsubstrate 20 by using a pressing device 50, for example.

When a selected region of anisotropically conductive film 30 is heatedand pressurized in a thickness direction, resin component becomes softand squashed. In the example described above, electrode bumps 11 ofsemiconductor chip 10 and conductor bumps 21 of insulating substrate 20are both protruding, and therefore, of anisotropically conductive film30, a region between opposing electrode bump 11 and conductor bump 21 isselectively squashed. As a result, as can be seen from FIG. 7,conductive particles 32 dispersed in the resin comes to be in contactwith electrode bump 11 and conductor bump 21. Of anisotropicallyconductive film 30, a region not interposed between electrode bump 11and conductor 21 is not squashed or squashed only to a small extent, andtherefore, conductive particles 32 therein are still dispersed in thethickness direction of anisotropically conductive film 30. Therefore,insulation between regions on both surfaces of semiconductor chip 10 andinsulating substrate 20 other than regions of electrode bumps 11 andconductor bumps 21 is maintained.

In the present invention, anisotropically conductive film 30 is stuck onsemiconductor wafer 1 in the state of the wafer, and a semiconductorchip 10 obtained by dicing the wafer is mounted on insulating substrate20. Therefore, when semiconductor chip 10 is to be mounted, it is notnecessary to newly provide anisotropically conductive film 30 of verysmall size corresponding to the size of semiconductor chip 10 to bemounted, by the same number as semiconductor chips 10 to be mounted.Further, before mounting semiconductor chip 10, it is not necessary toplace anisotropically conductive film 30 one by one on conductor bumps21 of insulating substrate 20 or to stick the films on main surface 10 aof the semiconductor chips 10. Therefore, semiconductor chip 10manufactured in the above described manner is advantageous in that anyspecial preparation is not necessary before mounting the semiconductorchip 10.

As can be best seen FIG. 8, insulating substrate 20 with semiconductorchip 10 mounted in the above described manner is resin packed and formedas a module, by transfer molding using a thermosetting resin such asepoxy resin or by injection molding using a thermoplastic resin.

An IC module 5 provided as a module with resin package 4 formed in theabove described manner is fitted in a resin card 70 a having a throughhole 71 corresponding to the shape of IC module 5 formed of polyethyleneterephtalate (hereinafter referred to as “PET”) or polyvinyl chloride(hereinafter referred to as “PVC”). When IC module 5 is fitted in resincard 70A, an epoxy resin based adhesive may be used, for example. Resincard 70A with IC module 5 fitted in this manner has cover sheets 70, 70each formed to have the thickness of above 0.05 mm stuck on upper andlower surfaces by PET or PVC, for example. Thus, IC card 70, andespecially, IC module 5 is protected.

In the above described embodiment, insulating substrate 20 on which asemiconductor chip is mounted is resin packed. However, insulatingsubstrate 20 with the semiconductor chip 10 mounted without resinpackaging may be fitted in resin card 70A.

In IC card 7, antenna coil 20 a is formed as a pattern on insulatingsubstrate 20. Antenna coil 20 a, however, may a be a wound coil formedas a separate body, by winding metal wire.

What is claimed is:
 1. A method of manufacturing a semiconductor wafer,comprising the steps of: fabricating a plurality of circuit elementsintegrally on a substrate; forming electrode bumps on electrode padsconducting to respective said circuit elements; forming a scribe line ora scribe line mark at a prescribed position on said substrate; andsticking an anisotropically conductive film to cover said electrodebumps and said scribe lines or scribe line mark; wherein said step offorming said electrode bump and said step of forming the scribe lines orscribe line mark are performed simultaneously.
 2. The method ofmanufacturing a semiconductor wafer according to claim 1, wherein saidstep of forming said electrode bump and said scribe line or scribe linemark includes the step of: forming an insulating layer protecting eachof said circuit elements to expose upper surfaces of said electrodepads; forming a barrier metal layer entirely over a circuit elementforming region on said substrate; forming a photo resist layer atpositions corresponding to regions where said electrode pads are formedand positions for forming said scribe line or scribe line mark; forminga metal layer at portions where the photo resist layer is not formed;and removing the photo resist layer and the barrier metal layer.
 3. Themethod of manufacturing a semiconductor wafer according to claim 1,wherein said electrode bumps and said scribe line or scribe line markare formed of gold.
 4. A semiconductor wafer, comprising: a substratehaving a scribe line or a scribe line mark formed at a prescribedposition and a plurality of circuit elements fabricated integrally;electrode bumps formed simultaneously with said scribe line or scribeline mark, on electrode pads conducting with respective said circuitelements; and an anisotropically conductive film stuck on said substrateto cover said electrode bumps and said scribe line or scribe line mark.5. The semiconductor wafer according to claim 4, wherein said electrodebumps and said scribe line or scribe line mark are formed of gold.
 6. Amethod of manufacturing a semiconductor chip, comprising the steps of:fabricating a plurality of circuit elements integrally on a substrate:forming electrode bumps on electrode pads conducting to respective saidcircuit elements; forming a scribe line or scribe line mark at aprescribed position of said substrate; sticking an anisotropicallyconductive film to cover said electrode bumps and the scribe line or thescribe line mark; and dicing the semiconductor wafer formed through theabove described steps said circuit element by circuit element using saidscribe line or the scribe line mark as a reference mark; wherein saidstep of forming said electrode bumps and said step of forming the scribeline or the scribe line mark are performed simultaneously.
 7. The methodof manufacturing a semiconductor chip according to claim 6, wherein saidstep of forming said electrode bumps and forming the scribe line or thescribe line mark includes the steps of forming an insulating layerprotecting said circuit elements and exposing upper surfaces of saidelectrode pads; forming a barrier metal layer entirely over a circuitelement forming region of said substrate; forming a photo resist layerto expose portions corresponding to regions where said electrode padsare formed and portions where said scribe line or the scribe line markis formed; forming a metal layer at portions where the photo resistlayer is not formed; and removing the photo resist layer and a barriermetal layer.
 8. The method of management a semiconductor chip accordingto claim 6, wherein said electrode bumps and said scribe line or thescribe line mark are formed of gold.
 9. A semiconductor chip, providedby dicing a semiconductor wafer including a substrate having a scribeline or a scribe line mark formed at a prescribed position and having aplurality of circuit elements fabricated integrally, electrode bumpsformed simultaneously with said scribe line or the scribe line mark onelectrode pads conducting to said circuit elements, an anisotropicallyconductive film stuck on said substrate to cover said electrode bumpsand said scribe line or the scribe line mark, said circuit element bycircuit element, using said scribe line or the scribe line mark as areference mark.
 10. A semiconductor chip according to claim 9, whereineach of said electrode bumps and said scribe line or the scribe linemark are formed of gold.
 11. An IC card having a semiconductor chip, aninsulating substrate on which the semiconductor chip is mounted and anantenna coil conducting to said semiconductor chip embedded in a resincard, wherein said semiconductor chip is obtained by dicing asemiconductor wafer including a substrate having a scribe line or ascribe line mark formed at a prescribed position and a plurality ofcircuit elements fabricated integrally, electrode bumps formedsimultaneously with said scribe line or the scribe line mark onelectrode pads conducting with said circuit elements, an anisotropicallyconductive film stuck on said substrate to cover each of said electrodebumps and said scribe line or the scribe line mark, said circuit elementby circuit element using said scribe line or the scribe line mark as areference mark.
 12. The IC card according to claim 11, wherein each ofsaid electrode bumps and said scribe line or the scribe line mark areformed of gold.